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NSFDirectorate for Technology, Innovation, and Partnerships

I-Corps: Translation potential of gating spin qubits using spin orbit torque (SOT)-driven nanomagnets

Active
Institution
Virginia Commonwealth University, VA
Principal investigator
Jayasimha Atulasimha
Funding
$50K
Duration
2026–2027
Open portfolio

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Abstract

This I-Corps project is based on the development of an ultra-low-power computing and physical control framework designed to scale spin-based quantum computers. Current spin qubit (quantum bit; the basic unit of information in quantum computing) quantum computers are unable to scale to millions of qubits due to excessive heat generation and slow control mechanisms at sub-kelvin temperatures. This technology addresses this problem by using localized magnetic torque to manipulate classical nanomagnets that generate highly localized microwaves to control individual qubits quickly with minimal power consumption. This solution may enable the creation of large-scale, high-fidelity quantum processors by reducing heat generation while maintaining high operation speeds and fragile quantum information. Applications include semiconductor manufacturing, quantum hardware components, and high-performance computing industries. This may accelerate breakthroughs in material science, complex system optimization, and cryptographic security. This I-Corps project utilizes experiential learning coupled with first-hand investigation of the industry ecosystem to assess the translation potential of a spin orbit torque (SOT)-driven nanomagnetic device for quantum computers. The nanomagnetic control architecture is integrated with silicon/silicon-germanium (Si/SiGe) quantum dot heterostructures and other spin qubits. Currently, electron spin resonance (ESR) and electric dipole spin resonance (EDSR) techniques suffer from slow gating speeds and high dephasing, respectively. This technology uses a low-magnitude current through a heavy metal stripline to produce SOT that drives magnetization dynamics in a ferromagnetic nanomagnet deposited on it. This generates a highly localized radio frequency (RF) stray field at the qubit plane, an order of magnitude larger than standard Oersted fields. Preliminary research demonstrates high Rabi frequencies and high coherence times as well as gate fidelity reaching 99.99%. In addition, this control architecture is complementary metal-oxide-semiconductor (CMOS)-compatible and low-power, which may offer improved qubit scale-up capabilities and enhanced fidelity in spin-based quantum processors. This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

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Directorate for Technology, Innovation, and Partnerships01002627DB NSF RESEARCH & RELATED ACTIVITTIP-CHIPS KTA-3 Quantumindividuallocalizedacceleratesiliconperformancesemiconductordepositedsufferindustrydeemed

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